Vol. 277, Issue 5, H1956-H1966, November 1999
Sequential gating in the human heart
K+ channel Kv1.5 incorporates
Q1 and
Q2 charge
components
J. Christian
Hesketh and
David
Fedida
Department of Physiology, University of British Columbia,
Vancouver, British Columbia, Canada V6T 1Z3
 |
ABSTRACT |
On-gating current from the Kv1.5 cardiac
delayed rectifier K+ channel
expressed in HEK-293 cells was separated into two distinct charge
systems, Q1 and
Q2, obtained from
double Boltzmann fits to the charge-voltage relationship.
Q1 and
Q2 had
characteristic voltage dependence and sensitivity with half-activation
potentials of
29.6 ± 1.6 and
2.19 ± 2.09 mV and
effective valences of 1.87 ± 0.15 and 5.53 ± 0.27 e
,
respectively. The contribution to total gating charge was 0.20 ± 0.04 for Q1 and
0.80 ± 0.04 (n = 5) for
Q2. At
intermediate depolarizations, heteromorphic gating current waveforms
resulted from relatively equal contributions from
Q1 and
Q2, but with
widely different kinetics. Prepulses to
20 mV moved only
Q1, simplified on-gating currents, and allowed rapid
Q2 movement.
Voltage-dependent on-gating current recovery in the presence of
4-aminopyridine (1 mM) suggested a sequentially coupled movement of the
two charge systems during channel activation. This allowed the
construction of a linear five-state model of
Q1 and
Q2 gating charge
movement, which predicted experimental on-gating currents over a wide
potential range. Such models are useful in determining state-dependent
mechanisms of open and closed channel block of cardiac
K+ channels.
potassium channel; voltage-dependent gating; kinetic model
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INTRODUCTION |
VOLTAGE-DEPENDENT
K+ (Kv) channels have an important
role during the repolarization of neuronal and cardiac action
potentials. Voltage sensitivity is determined within the S4
transmembrane helices, which contain four to seven positively charged
amino acids at every third position, with intervening hydrophobic
residues (20, 22, 24, 27). Movement of the S4 helix on depolarization controls channel opening by inducing a cooperative, conformational change in the channel protein. Distinct topological states of the S4
helix have been associated with the resting and open conformations of
Shaker
K+ channels using
cysteine-scanning mutagenesis or fluorescence (17, 18). On
depolarization, the S4 helix moves upward, causing specific residues to
be exposed to the extracellular space, thereby producing outward
on-gating currents
(Igon).
Recent studies using voltage-clamp fluorometry have attempted to define
intermediate topological states of the channel protein (1, 6) and have been guided by the idea of two distinct charge systems with different voltage-dependent parameters, dubbed
Q1 and
Q2 (3). When
Q1 is maximally
moved, the S4 helix is thought to exist in an intermediate state and
only reaches its final destination on movement of
Q2.
The existence of two charge systems is of interest because it can allow
the separation of gating charge into two distinct components
biophysically and structurally. In addition, it is possible that the
different charge systems may provide separate and distinct targets for
drug interaction with Kv channels. In Shaker
K+ channels,
Q1 carries
somewhat less charge than
Q2 does (3), and
it has been suggested that
Q1 is associated
with movement of an auxiliary gating particle that is not part of S4
(6). Recent fluorometric studies, however, suggest that both
Q1 and Q2 are caused by
movement of the S4 transmembrane helix, although the importance of an
auxiliary particle influencing gating is not excluded (1). The two
charge components move in a sequential manner such that
Q1 must move
before Q2 on
depolarization (1, 3), and this has several practical and kinetic
implications. Q1
movement must impart a delay on
Q2 movement that
will slow the apparent
Q2 kinetics as
well as slowing channel activation. Q1 movement may
in part be responsible for the Cole-Moore shift of ionic currents in
which channel activation is faster after more depolarizing prepulses
(3, 9). In addition, the relative stability of the intermediate state
at various holding potentials in different channels may help explain
widely different voltage-dependent gating in channels with a similar S4
charge valence (1).
The voltage-dependent properties of
Q1 and
Q2 have been
characterized in Drosophila Shaker
channels expressed in Xenopus oocytes (3), but studies in mammalian Kv2.1 and Kv1.5 channels have usually
limited Boltzmann analysis of charge-voltage
(Q-V) relationships to a single
charge system (8, 29). In the present study, we have questioned whether
the
Q1/Q2
two-charge system model can adequately describe the on-gating currents
in the cardiac Kv channel, Kv1.5, and whether sequential coupling of
the two systems is required. We have taken advantage of the high
expression of Kv channels in small HEK-293 cells and measured
Igon
to characterize and model the
Q1 and
Q2 gating charge
systems of stably expressed Kv1.5. Two charge systems were immediately
suggested by the strikingly biphasic
Igon
waveforms at intermediate potentials, not apparent in data from other
channels. In addition, voltage-dependent parameters of these two charge
systems in Kv1.5 have allowed separation of the two components in a
manner not possible for the analogous systems in
Shaker
K+ (3) or cardiac L-type
Ca2+ channels (16). The sequential
nature of the two charge systems was studied in more detail than in
previous studies (3) by using 4-aminopyridine (4-AP) to prevent late
steps in channel opening, and the data strongly argue for a sequential
mechanism of both activation and deactivation gating. Finally, it was
found that both isolated
Q1 and
Q2 charge systems
showed features suggestive of multiple gating steps for each charge
system. On the basis of these data, we constructed a simple linear
sequential model made up of four transitions, with two discrete
transitions making up each of the
Q1 and
Q2 gating charge systems.
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MATERIALS AND METHODS |
Cells and solutions.
To record gating currents, a stable cell line expressing Kv1.5 with the
point mutation W472F was created using the Stratagene Chameleon Kit
(Stratagene, La Jolla, CA). The mutation is analogous to the
ShH4-IR W434F mutation, which
abolishes K+ conduction (23).
HEK-293 cells were transfected with a linearized plasmid expression
vector, pRC/CMV, containing Kv1.5-W472F, using LipofectACE reagent
(Canadian Life Technologies, Bramalea, Canada) in a 1:10 (wt/vol)
ratio. Linearization of the plasmid facilitated recombination of the
plasmid DNA with the HEK chromosomal DNA and resulted in the production
of clones with expression levels high enough to record gating current.
Patch pipettes contained 140 mM
N-methyl-D-glucamine
(NMG), 1 mM MgCl2, 10 mM HEPES,
and 10 mM EGTA, adjusted to pH 7.2 with HCl. The bath solution
contained 140 mM NMG, 1 mM MgCl2,
10 mM HEPES, 1 mM CaCl2, and 10 mM dextrose, adjusted to pH
7.4 with HCl. All chemicals were from Sigma Chemical (St. Louis, MO).
In experiments utilizing 4-AP, 1 mM 4-AP, adjusted to pH 7.4, was
perfused into the bath via a gravity-fed mechanism.
Electrophysiology.
Current recording and data analysis were done using an Axopatch 200A
amplifier and pCLAMP6 software (Axon Instruments, Foster City, CA).
Patch electrodes were fabricated using thin-walled borosilicate glass
(World Precision Instruments, Sarasota, FL). After they were fire
polished, pipettes used to measure current had resistances of
1-3.5 M
when filled with control filling solution. For the nine
cells from which complete Q-V
relationships were obtained, mean whole cell series resistance was 3.01 ± 0.52 (±SD) M
and mean cell capacitance was 16.8 ± 4.5 (±SD) pF. It was often possible to measure capacity transients from
the cells that decayed with a simple exponential time constant of <50
µs, as illustrated in Fig. 1C. As we
have stated previously (8), the HEK cell membrane was extremely linear
at negative potentials, and leakage and capacitive currents were
routinely subtracted on-line using a
P/6 protocol (34) from a
holding potential of
80 or
100 mV. No nonlinear charge
movement was observed at potentials between
80 and
120 mV
that would be able to distort waveforms during leak subtraction. This
is illustrated in Fig.
1A,
where gating charge is shown at +60 mV with or without a prepulse to
120 mV.

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Fig. 1.
Gating current measurement in Kv1.5-HEK cell system.
A: test for gating charge movement
between 80 and 120 mV. Gating charges during test pulses
to +60 mV are indistinguishable from each other when preceded by a
prepulse to either 80 or 120 mV.
Inset: pulse protocol.
B: single unaveraged trace of gating
current elicited by a 20-ms depolarizing pulse from 80 mV to
20 mV followed by repolarization to 80 mV.
C: typical unsubtracted
linear capacity transient during a 20-mV depolarization from 100
mV to 80 mV. It has been fit to a single exponential function
with a 35-µs time constant ( ). Dotted lines in
B and
C represent zero current.
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In almost all the records obtained, a very rapid gating current rise in
the first 200 µs after the pulse was applied was limited by the clamp
of the membrane, with time constants around 50 µs (see above), as
shown in Fig. 1B at
20 mV. This
resulted in a fast but sloping rise at almost all potentials (Fig.
2). This was followed by a short plateau
phase (Fig. 1B) that became more prominent at increasing depolarizations (Fig.
2A) and could be accompanied by a
rising phase (e.g., at +28 mV in Fig. 2). The current plateau usually
took 1.5 ms to reach completion, before current decays (Figs.
1B and
2A) and was not limited by the clamp speed, which allowed detection of a rapid off-gating current as well as
the slow on-gating current evident at
20 mV (Fig.
1B).

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Fig. 2.
Voltage-dependent on-gating current
(Igon)
and on-gating charge
(Qon) in Kv1.5
in response to depolarizing voltage pulses from 96 mV to +92 mV.
A:
Igon
from a holding potential of 100 mV in 16-mV steps.
Inset: off-gating currents at
100 mV from same recordings as in
A. Labels refer to potentials during
preceding depolarizations. B:
Qon measured by
integration of
Igon
transients over time periods sufficient to allow currents to relax to
baseline, usually 20 ms. Tracings are shown for depolarizations in 8-mV
steps. Data from A and
B are from same cell.
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Series resistance compensation was not used because of the relatively
small size of the gating currents. Data were sampled at 200 kHz for
protocols with a short time length (<50 ms) and up to 50 kHz for
longer protocols. Data were filtered at 10 kHz for all protocols. All
experiments were performed at 22°C. All on-gating charge
(Qon)
measurements were obtained by integrating the on-gating currents until
current waveforms decayed to the baseline, which was completed by 20 ms. All results obtained from multiple cells are reported as the means ± SE.
Modeling.
A linear sequential model was used to describe on-gating currents from
Kv1.5. The model contained five states with forward and backward
transitions governing movement between each of these states.
C0 represents a resting state of
the channel at the most hyperpolarized potentials, whereas
C4 represents the state reached at
the most positive potentials studied. This model does not contain an
open state or an inactivated state and, as such, is not a model of
channel activation but, rather, of the transitions preceding activation. Two charge systems,
Q1 and
Q2 were modeled
by transitions between states C0
and C2 and between states
C2 and
C4, respectively. The rationale
for this was the minimal model required to simulate the gating current
waveforms based on two components of charge movement
(Q1 and
Q2) obtained
from a double Boltzmann function fit to the
Q-V curve (Fig.
3). This was of the
form
|
(1)
|
where
Q1 max and
Q2 max are
the maximum charges that can be moved by
Q1 or
Q2 and are
proportional to the number (n) of
mobile electronic charges
(e
) and
to the apparent valence of the charge moved
(z'):
Qmax = nz'e
,
where z' is related to the real
charge z by the relation
z' = z
, with
representing the
fraction of the electric field traversed by the charge.
V1 and
V2 are the
half-activation potentials, and the slope factors
K1 and
K2 reflect the
steepness of the voltage dependence of
Q1 and
Q2, respectively.
K1 and
K2 are inversely proportional to z'1
and z'2 as
K1 = kT/z'1e
,
where k is the Boltzmann constant and
T is absolute temperature. The
apparent valence z' of the
gating charge associated with each state transition was assumed to be
symmetrical for the forward and backward transitions. With the use of
these simplifying assumptions, the model contained only three free
parameters for each transition and only two free parameters at very
positive voltages at which the charge of the system was saturated and
the backward rates were essentially zero. The gating charge comprising
the Q1 and Q2 charge systems
was calculated from the steepness of the voltage dependence of the two
components of the double Boltzmann function at 1.87 and 5.53 e
,
respectively.

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Fig. 3.
Two charge systems can account for steady-state gating charge-voltage
(Q-V) relationship.
Qon was obtained
by integration of
Igon
over 20 ms ( ). Solid line through points was fit to data using a
double Boltzmann function (see
METHODS, Eq. 1). Mean fit parameters are listed in Table 1. Dotted
and dashed lines indicate portion of
Q-V relationship attributable to each
of the charge systems,
Q1 and
Q2, respectively.
Left inset:
Q2 charge
isolated after a 20-mV prepulse (see text). Slight decrease of
peak Q2 charge
levels seen at most positive potentials is an artifact that resulted
from a slight nonlinearity during leak subtraction in this example.
Right inset: charge movement over
voltage range from 49 to 25 mV in which only
Q1 moves.
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The model was constructed using SCoP and SCoPfit (version 3.51, Simulation Resources, Redlands, CA). The number of channels moving
between different states was described by a series of first-order differential equations and solved numerically. Rates of these transitions were solved by fitting the model to experimental data comprising isolated
Q1 or
Q2 traces (Fig.
3) using the three-state model mentioned above for each charge system.
The proportion of charge associated with each transition was allowed to
float freely during initial fitting and remained relatively constant in
data from different cells. For both charge systems best fits were
obtained when the first transition carried 33% of the total gating
charge (z') associated with
Q1 or
Q2. The rates of
Q1 transitions at voltages greater than
20 mV, for which there were no unique
Q1 data to fit,
were determined by fixing
Q2 rates and
fitting overall gating current data. The mean values of the rates
obtained from data from five different cells were then fit for their
relationship to voltage using single or double exponential functions.
These functions, describing the voltage dependency of the rates, were then merged into the five-state model described above to generate the
model simulations (see Fig. 7). This model is unique because it
considers the Q1
and Q2 charge
systems to be discrete but to interact solely on the basis of a
sequential association.
 |
RESULTS |
General features of Kv1.5 gating charge movement.
Stable expression of Kv1.5-W472F in an HEK-293 cell line allowed the
recording of large
Igon
with good time resolution. Data illustrated in Fig. 2 were obtained
from a single cell, and these waveforms are representative of
Igon
and Qon waveforms
from 18 other cells. The data in Fig.
2A show that currents are readily apparent after depolarizing pulses to
36 mV and more positive without trace averaging. The kinetics of Kv1.5
Igon
are strongly voltage dependent, because peak current increases and the
decay becomes faster at higher depolarizations. A rising phase as well as a complex exponential decay from peak is apparent at most potentials but is most marked at intermediate depolarizations between
4 and
+28 mV (Fig. 2). Decay of
Igon
is complete during the 20-ms duration of the depolarizing pulse.
Off-gating currents are shown in Fig.
1A,
inset. We have described these at some
length in prior studies (8, 32). For small depolarizations up to
10 mV, these currents have a rapid transient time course, but
after more positive depolarizations they begin to develop a slow decay
phase (from
4 mV to +12 mV). At potentials more positive than
+50 mV, both the rising phase of off-gating current and the decay phase are very slow. The reasons for the slowing are complex and related to
changes in channel conformation that occur during opening and slow
charge return (2, 8, 25, 34). These likely include a relatively
voltage-independent rearrangement that leads to pore opening and, once
open, to rapid onset inactivation, which is slow to reverse (2, 8). In
this consideration of activation charge systems in Kv1.5 we did not
consider these slow rearrangements. For this reason the model did not
contain an "open" state and did not attempt to model charge return.
Time integration of records like those in Fig.
2A allows visualization of
Qon as shown in
Fig. 2B. Charge moves relatively slowly negative to 0 mV, but after
Qon amplitude
saturates (+16 mV), the kinetics of
Qon continue to
get faster as the depolarization increases. The sigmoidal nature of the
charge waveforms necessitate the adoption of gating models that
comprise at least three states.
Steady-state separation of gating charge into two gating components.
The amplitude of
Qon at different
depolarizing potentials (Q-V curve)
reveals a relationship with strong sigmoidicity (Fig. 3). The
Q-V curve in Fig. 3 is from the same
cell as that from which the
Igon
waveforms were obtained in Fig. 2, and the general Q-V relationship was consistent across
nine complete sets of data obtained. Attempts to fit this relation with
a single Boltzmann function were unsuccessful (data not shown) because
of the shallow rise of the curve (the "foot") and the steep
voltage dependence of charge saturation at higher voltages. This
suggested a component of the overall gating charge with a more shallow
voltage dependence, activated at lower depolarizations, and a second,
more voltage-dependent component, activated at more depolarized
voltages. The data points were fit with a double Boltzmann function
(Fig. 3), and the component single Boltzmann functions were then
plotted on the same axes and termed
Q1 and
Q2.
Q1 is a smaller
component, is less voltage dependent, and is activated at lower
depolarizations than the Q2 component.
This two-component system for
Qon has been
demonstrated previously in two other voltage-gated ion channels,
Shaker (3) and human heart L-type
Ca2+ channels (16). The general
voltage-dependent parameters of Q1 and
Q2 are conserved
in all three channel types, but there are subtle differences that may
explain the variability among the gating current waveforms of these channels.
The voltage-dependent parameters of
Q1 and
Q2 in Kv1.5 are
shown in Table 1. The double Boltzmann
parameters shown in Table 1 are from five cells that displayed the most
consistent fits; however, the general properties of the
Q-V curves were remarkably similar
between the nine cells from which complete
Q-V relations were obtained. The
27.5-mV difference between the half-activation potentials
V1 and
V2 is such that
the two charge systems can be separated using relatively simple
protocols. Very little
Q2 moves at
voltages negative to
20 mV, so gating current elicited by depolarizing pulses up to
20 mV should represent almost
exclusively Q1
gating charge (Fig. 3, right inset).
In addition, a
20-mV prepulse can move most of
Q1, so gating
current during a test pulse to more depolarized potentials should
reflect largely
Q2 charge
movement (Fig. 3, left inset).
Q1 kinetics
between
49 and
25 mV have a shallow voltage dependence
and a gradual increase in steady-state charge amplitude with potential.
In contrast, positive to
20 mV, both the
Q2 kinetics and
steady-state charge exhibit a strong voltage dependence. Most of
Q2 moves between
10 and +10 mV, and although overall gating charge waveforms
exhibit a slightly sigmoidal time course (Fig.
2B), isolated
Q2 charge movement shows very little sigmoidicity. This results in isolated Q2 gating
currents with a briefer peak plateau phase and a less prominent rising
phase. Isolated gating charge traces in Fig. 3 are each from different
cells and show features (i.e.,
Q2: faster rise
time; Q1: rising
phase) similar to those of eight other cells for
Q1 charge and 11 other cells for
Q2 charge.
Kv1.5 on-gating currents have a unique biphasic nature.
Gating currents from Shaker channels
(3, 23, 25) and L-type Ca2+
channels (16) show monophasic single and double exponential decays with
sharp peaks. Kv1.5 gating currents have more rounded peaks and plateaus
that, at some potentials, allow visual separation of the two charge
systems (Fig.
4A).
This biphasic nature of
Igon prevented the kinetic separation of
Q1 and
Q2 obtained from
Shaker and L-type
Ca2+ channel
Igon
waveforms by dual exponential fits to the current decay (3, 16). The
voltage-dependent parameters of
Q1 and Q2 are such that
the decay phases of
Q1 and
Q2 do not
coincide sufficiently at intermediate potentials to produce smooth
double exponential decays. The data in Fig.
4A show clearly biphasic waveforms at
two different voltages. At
20 mV, only
Q1 moves and the
charge waveform has a clear monophasic decay. At
4 mV, a
biphasic trace is evident with an initial rapid decay followed by a
slower decay, which produces a "notch" early in the gating current trace (Fig. 4A, arrow).
Further depolarization to +12 mV leads to more accelerated
Q2 movement and a
merging of Q1 and Q2 components
that results in an extended plateau phase followed by a monotonic decay
(see also Fig. 2A). Depolarizations
to +40 mV elicit currents with less rounded peaks followed by clear
monotonic decays. The notch and "plateau" evident in
gating currents from
4- and +12-mV depolarizing pulses,
respectively (Fig. 4), are extremely well conserved across cells. In
addition, these features were consistently reduced when preceded by a
20-mV prepulse in four cells, with representative data shown in
Fig. 4B.

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Fig. 4.
Complex
Igon
waveforms at intermediate potentials.
A:
Igon
at 20, 4, and +12 mV from a holding potential of
100 mV. B:
Igon
at 4 and +12 mV with or without a 9-ms 20-mV prepulse as
indicated. Qon at
4 mV (C) and +12 mV
(D) were obtained by integration of
traces in B. Arrows in A
and B indicate "notch" produced by an initial rapid
decay followed by a slower decay (see text).
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A test of the interplay between
Q1 and
Q2 at
intermediate potentials was carried out by comparing current waveforms
before and after
20-mV prepulses to remove
Q1 (Fig.
4B). Gating currents from a
80-mV holding potential show the characteristic biphasic notch
and plateau at
4 and +12 mV, respectively. After a
20-mV prepulse, the notch evident at
4 mV is eliminated and the
plateau at +12 mV is much reduced. The isolated
Q2 also activates
more quickly with an absent rising phase, which produces the crossover evident in the pairs of traces. The data in Fig. 4,
C and
D, show charge integrals of the
prepulse and test pulse gating current for the experiments shown in
Fig. 4B. The essential feature of these charge integrals is that the charge moved during the
20-mV prepulses (Q1)
is not subsequently moved during the test pulses. Thus the different
time course and amplitudes of test pulse charges from
80 or
20 mV are caused by the absence of
Q1 from
20 mV.
Return of Q1 and
Q2 gating charge in
presence and absence of 4-AP.
An important rationale for the adoption of a sequential model for
Q1 and
Q2, rather than
independent parallel movement of the two charge systems, comes from
previous studies of the return of
Shaker gating charge. These studies
have shown that
Q1 and Q2 do not return
independently but, rather, interact during deactivation. The result is
that the more complete the transfer of
Q2, the less mobile is Q1 on
repolarization (3). Similar interactions were apparent in Kv1.5 charge
return experiments (Fig. 5). To investigate this interaction, a three-pulse protocol was used. First, all charge
was moved by fully activating the channels with a depolarization to +80
mV. Variable length repolarizations to
80 mV then allowed recovery of the two charge systems. Finally, the time course of Q1 and
Q2 recovery was
assessed during test pulses to
20 mV
(Q1) or +80 mV
(Q2). Figure
5A, at +80 mV, and Fig.
5B, at
20 mV, show the recovery
of Q2 and
Q1 gating
currents, respectively (currents during the prepulses have been
omitted). The time course of
Igon recovery of the two systems appears very similar and appears to follow
the time course of return of the off-gating current shown in Fig.
5A for
Q1. This was
confirmed when the
Q1 or
Q2 charge integrals of the gating currents were plotted against the recovery time
(Fig. 5C). Recovery time constants
for Q1 and
Q2 were 15.2 ± 1.7 ms (n = 3) and 19 ± 1.3 ms (n = 3), respectively. One
interpretation of this similarity is that recovery of the two systems
is coupled in a sequential manner in which
Q2 must recover
before Q1 may recover.

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Fig. 5.
Measurement of recovery time course of
Q1 and
Q2 in presence or
absence of 1 mM 4-aminopyridine (4-AP). In all cases, prepulse was a
20-ms depolarizing pulse to +80 mV and recovery period was a
80-mV hyperpolarizing pulse of variable duration. In all cases,
current recovery was assessed with a test pulse to 20 mV
(Q1 recovery) or
+80 mV (Q2
recovery). In A,
B, D,
and E, only currents during test
pulses are shown. Charge recovery was assessed by integration of test
pulse current over a time period of 20 ms. Recovery of
Q2
(A) and
Q1
(B) in absence of 4-AP is shown
following recovery times ranging from 0.5 to 48.5 ms.
C: time course of
Q1 recovery ( ,
n = 3, mean ± SE) and
Q2 recovery ( ,
n = 3, mean ± SE). Recovery of
Q2
(D) and
Q1 (E) in
presence of 1 mM 4-AP is shown following recovery times ranging from
0.2 to 5.0 ms. F: time course of
Q1 recovery ( ,
n = 4, mean ± SE) and
Q2 recovery ( ,
n = 4, mean ± SE).
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The problem is that this interpretation is not exclusive.
Q2 charge
movement is thought to herald channel opening, which involves a
relatively voltage-independent conformational change (3). After channel
opening, other processes can also occur, including inactivation (12,
13) and transient sojourns in closed states not in the activation
pathway (14). On repolarization, transitions between any of these
states and closed states in the deactivation pathway may be rate
limiting and, as such, the time course of these transitions would
govern recovery of both
Q1 and
Q2. This would
result in a similar time course of recovery of the two systems, and
they would also parallel the recovery of off-gating current. In such a
way, parallel independent movement of
Q1 and
Q2 could be
concealed and therefore cannot be excluded. 4-AP is thought to prevent
opening of Shaker channels by blocking
a final allosteric transition in the activation pathway (19). 4-AP and
channel inactivation are also thought to be mutually exclusive (5). Similar effects of 4-AP have been shown in Kv1.5 (4, 10), which
suggests that it may act in a like manner. We have attempted to use
4-AP to prevent channel opening and entry into any further states that
may limit the rate of charge recovery. In this way we have attempted to
isolate closed-state transitions when the kinetics of subsequent gating
current recovery should more closely represent isolated
Q1 and
Q2 charge systems.
The same three-pulse experiment as that shown in Fig. 5,
A-C was performed in the presence
of 1 mM 4-AP, and the results are shown in Fig. 5,
D-F. As expected, the time course
of the experiment was much faster when rate-limiting transitions were
prevented. The time course of the inward off-gating current envelope
was very fast and was completed within a few milliseconds. In this situation, recovery of
Igon
due to Q2 (Fig.
5D) and
Q1 (Fig.
5E) followed a much faster time
course than in the absence of 4-AP. However, both
Q1 and
Q2 recovery still
occurred at the same speed. This is clearly seen in the charge return
relations in Fig. 5F, plotted on a
10× faster time base than in the absence of 4-AP (Fig.
5C). The recovery time constants for
Q1 and
Q2 with 4-AP are
1.17 ± 0.1 ms (n = 4) and 0.97 ± 0.06 ms (n = 4), respectively. From these data we gain additional support for a sequential coupled model of Q1 and
Q2 charge
movement in Kv1.5.
Voltage dependence of Q1
and Q2 charge recovery.
A third possible interpretation of the results from Fig. 5 is that the
two charge systems recover in parallel, but simply at the same rate.
However, if the
Q1 and
Q2 charge systems
can recover independently, the voltage dependence of the recovery rates
should differ on the basis of the strong disparity between the voltage
dependence of activation of
Q1 and
Q2 (Fig. 3 and Table 1). Again, to avoid the problem of rate-limiting transitions around opening, a three-pulse protocol was used to test this idea in
the presence of 1 mM 4-AP. The first pulse was either to +80 mV to move
both Q1 and
Q2 or to
20 mV to move
Q1 alone. This conditioned the channels, and then variable duration repolarizations to
three potentials allowed charge system recovery, before the third pulse
to
20 or +80 mV to assess the recovery of the
Q1 and
Q2 charge
systems, respectively. The voltage dependence of the recovery rate of
the two charge systems was assessed by varying the repolarization
potential (
120,
80, and
40 mV) during the second pulse.
After a repolarizing pulse to very negative potentials (
120 mV),
recovery of Q1
alone, Q1 after
Q2 movement, and
Q2 proceeded relatively quickly and with a similar time course (Fig.
6A).
However, after a
40-mV repolarizing pulse, recovery of the
charge systems was much slower with the exception of
Q1 alone, which
continued to recover at a relatively rapid rate (Fig.
6B). The data in Fig. 6C represent a summary of the recovery
time constants of
Q2,
Q1 after
Q2 movement, and
Q1 alone at the
three repolarization potentials studied. Recovery rates of
Q1 and
Q2 from a state
in which both Q1
and Q2 have moved
were essentially indistinguishable at all three recovery potentials and
showed some voltage dependence. Recovery of
Q1 alone from a
channel state in which
Q2 was not moved
was much faster, with a shallow voltage dependence, and stayed rapid at
all three potentials. These results suggest a system in which recovery
of Q1 and
Q2 during channel
deactivation is strongly coupled and not one in which
Q1 and
Q2 movement can operate in parallel.

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|
Fig. 6.
Voltage dependence of
Q1 and
Q2 recovery.
A: rate of
Q2 recovery ( ,
n = 5),
Q1 recovery after
Q1 and
Q2 movement ( ,
n = 6), and
Q1 recovery in
absence of Q2
movement ( , n = 5) during a
120-mV repolarizing pulse.
Inset: pulse protocol used to measure
voltage dependence of
Q1 and
Q2 recovery
kinetics. B: rate of
Q2 recovery ( ,
n = 5),
Q1 recovery after
Q1 and
Q2 movement ( ,
n = 4), and
Q1 recovery in
absence of Q2
movement ( , n = 5) during a
40-mV repolarizing pulse. C:
summary of voltage dependence of
Q2 recovery rate
( ), Q1
recovery rate in presence of
Q2 movement
( ), and Q1
recovery in absence of
Q2 movement ( )
at 3 repolarization potentials. 4-AP (1 mM) was present continuously in
all experiments.
|
|
Modeling of Q1 and
Q2 charge systems.
The properties of Kv1.5 gating currents described to this point have
guided the construction of a model of on-gating currents in which
Q1 and
Q2 are first
modeled as separate three-state systems and then integrated into a
five-state sequential model (Fig.
7A). An
overall scheme in which two transitions were involved in each of the
Q1 and
Q2 charge systems
provided very good fits to Kv1.5 on-gating currents. The rising and
decay phases of gating currents are reproduced as well as the marked
plateau phases at intermediate potentials in Fig.
7B,
left. Here, original experimental data (noisy) have been overlain by model tracings. The model also gives an
indication of Q1
gating currents at higher potentials (greater than
20 mV), where
they cannot be isolated from
Q2 experimentally (Fig. 7B,
middle).
Q1 is predicted
to move progressively faster at higher depolarizations and to
have a rising phase. Predictions of
Q2 gating current
in a sequential system are shown in Fig. 7B,
right. At intermediate potentials, the
condition that Q1
must move before
Q2 imparts on
Q2 a much slower
time course. The effect of this is that modeled
Q2 has a
significant rising phase and much slower decay than original
experimental data showing
Q1 and Q2 or isolated
Q2 obtained after
moving Q1 (Fig.
3, left inset, and Fig.
4B). At more positive potentials
Q2 movement
accelerates dramatically and accounts for a large part of the composite
waveform (Fig. 7B,
left). The disparity
between Q1 and
Q2 kinetics has been shown experimentally by Bezanilla et al. (3) through kinetic separation of Q1
and Q2, a process
that was not possible with Kv1.5 gating currents.

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Fig. 7.
Model of Q1 and
Q2 charge
systems. A: linear sequential scheme
used to model Kv1.5
Igon.
C0 refers to closed state most
distal to open state, whereas C4
refers to closed state most proximal to open state;
C1,
C2, and
C3 are intermediate states.
Transitions corresponding to
Q1 and
Q2 are bracketed;
z'0 to
z'3 refer to
effective valence sensed by gating particle associated with each
transition. B,
left: superimposed model fits (solid
lines) through experimental points for
Igon
elicited by depolarizing pulses from 0 mV to +80 mV in steps of 20 mV;
middle and
right: modeled
Q1 and
Q2 components,
respectively, of model waveform at
left.
C: model of effect of a 20-mV
prepulse on currents at 4 mV
(left) and +12 mV
(right). Protocol is same as that
used to obtain experimental data in Fig.
3B. Dotted lines indicate modeled
Q1; dashed lines
indicate modeled
Q2 for composite
solid line showing total charge movement without a prepulse.
|
|
A further examination of the relationship between the
Q1 and
Q2 charge systems
illustrated by the model is shown in Fig.
7C, which represents simulations of
the experiments shown in Fig. 4B. In
accordance with the data in Fig. 4B,
test pulses from a
80-mV holding potential showed gating
currents with a small rising phase before the peak, followed by a
complex decay phase. Test currents after a
20-mV prepulse showed
a rapid rise to peak, followed by a significant reduction in the
complexity of the decay phase. Curves in each set of traces shown in
Fig. 7C reflect contributions of the
Q1 and
Q2 charge systems
to the overall simulated gating current waveform for a depolarization
from
80 mV. The relatively rapid decay of
Q1 is
complemented by the emergence of
Q2 after movement
of the Q1 charge
system. Although experimentally obtained Q2 traces (after
a
20-mV prepulse) show rapid kinetics (Fig. 4B), the constraint that
Q2 may only move
after Q1 imparts
slower kinetics on the dominant
Q2 charge system.
Within the combined system then, and as illustrated by the model,
Q2 shows a
relatively long time to reach peak and slow decay to baseline (Fig.
7C). The model predicts that this
delayed emergence of the
Q2 charge system,
following from the relatively rapid
Q1 charge system, accounts for the biphasic
Igon
waveforms evident in Fig. 4B.
 |
DISCUSSION |
Igon
waveforms from cardiac Kv1.5 share several features in common with
gating currents from other voltage-gated ionic channels, including the
general kinetic properties of the waveforms and the presence of two
distinct gating charge systems (3, 16). However, the voltage-dependent
parameters of the
Q1 and
Q2 gating charge
systems are different between these channels, as exemplified by the
biphasic waveforms characteristic of Kv1.5-W472F
Igon
at intermediate potentials. These two charge systems appear to move in
a sequential manner similar to that described in
ShB H4-IR-W434F (3). Modeling of
Q1 and
Q2 in a simple
linear sequential scheme demonstrates the important interactions
between the two charge systems and how this results in the overall
Igon waveform.
General kinetic features of
Igon are
invariable among different channels.
Many examples of gating current have been published from a variety of
voltage-gated ion channels including Drosophila
Shaker K+ (3, 21,
23), Kv1.5 (8), Kv2.1 (29), squid axon
Na+ (30, 31), and L-type cardiac
Ca2+ channels (11, 15, 16).
Despite the genetic diversity between these ion channel families,
Igon
waveforms consistently have a rising phase followed by a decay phase
with kinetics that become faster with depolarization. Kv1.5
Igon
waveforms are no exception (Fig.
2A), and these similarities
highlight a conserved voltage-dependent gating mechanism whereby
initial transitions are slower and/or carry less charge than subsequent
gating transitions. An additional conserved feature of
Igon
waveforms is the presence of two gating charge systems that contribute
to the overall
Igon
waveform in L-type Ca2+ and
Shaker
K+ channels (3, 16). We have
demonstrated the existence of two charge systems in a human cardiac
delayed rectifier K+ channel. The
smaller Q1
component is activated at more hyperpolarized potentials and is less
voltage dependent than the larger
Q2 component (Fig. 3) in all three voltage-gated ion channels. This suggests that
the Q1 and
Q2 charge systems
have a conserved role in voltage-dependent gating.
Charge movement after a
20-mV prepulse is much faster, as shown
by the rapid time course of isolated
Q2 traces
compared with the sigmoidal form of total
Qon movement
(compare Fig. 2 and Fig. 3B,
left inset). If movement of the two
charge systems is coupled so that
Q2 only moves
after Q1,
prepulses can remove this restriction and speed up the
Q2 kinetics.
Another interpretation is that prior movement of
Q1 allosterically
causes the channel to enter a state that is more permissive to
Q2 movement. This
interpretation does not require a strict sequential relationship
between the two charge systems but does suggest at least indirect
interactions. This acceleration of
Q2 kinetics
likely contributes to the Cole-Moore shift of ionic currents (9) and
has also been demonstrated in Shaker
gating currents, which show a more rapid decay and a less pronounced
rising phase (28). The early closed-closed transitions are traversed
during movement of
Q1 charge, so
Q1 movement may be the gating mechanism underlying the Cole-Moore shift.
Voltage-dependent parameters of
Q1 and
Q2 differ among channel
subtypes.
In Kv1.5, the half-activation potentials
(V0.5) for
Q1 and
Q2 are
approximately
30 and
2 mV, respectively, which reflect the separation of the two charge systems along the voltage axis. L-type
Ca2+ channels show a separation of
~60 mV (16), whereas charge system separation in
Shaker channels is less than that in
Kv1.5, at ~19 mV (3). The steepness,
K1 and
K2, of the
Q-V curves for
Q1 and
Q2 is determined
by the valence associated with the individual charge system multiplied
by the fraction of the electric field sensed. In Kv1.5, the
z' values for
Q1 and
Q2 are 1.87 and
5.53 e
,
respectively, quite similar to the values for
Shaker (2.4 and 5.04 e
for
Q1 and
Q2,
respectively), whereas
Q1 and
Q2 in L-type
Ca2+ channels are less voltage
dependent with z' values of
~1.6 and ~1.7
e
,
respectively. Both
V0.5 separation
and z' values dictate whether the two charge systems can be separated with prepulses. L-type Ca2+ channels show a strong
V0.5 separation
but have a Q1
system with a shallow voltage dependence, so saturation of
Q1 is far from complete at potentials at which
Q2 appears, and
separation becomes impossible. In
Shaker, although the voltage
dependencies of
Q1 and
Q2 are relatively
steep, their V0.5
values are not separated sufficiently along the voltage axis to allow
steady-state separation. In Kv1.5, steady-state separation of
Q1 and
Q2 can be
obtained by using a
20-mV prepulse (Fig. 3,
left and right
insets). This method has also been used to separate
charge systems in R365C Shaker mutants
(1).
Biphasic nature of
Igon at
intermediate potentials.
One striking difference between
Igon
from Kv1.5 and those from other channels is the biphasic waveform at
intermediate depolarizations (from
4 mV to +12 mV). These
deviate from the rising phase, sharp peak, and exponential decay of
Igon
from other channels (3, 16, 19, 25). The
4-mV
Igon
waveform has a clear rising phase, so charge movement cannot be
described by a single transition. The rapid decay phase, corresponding
to a subsequent faster transition (or one that carries more charge), is
interrupted by a slower decay that substantially slows the decay of the
overall trace (Fig. 4A). Because
Q2 appears at
20 mV and is <50% available at
4 mV (Fig. 3), this
emerging slow phase is probably
Q2, and the
coexistence of the two charge components with widely different kinetics
accounts for the biphasic
Igon
waveform. Because isolated Q2 traces appear
to rise and decay quickly (Fig. 4B),
it is sequential coupling (or allosterism) that creates biphasic
waveforms at intermediate potentials by imposing a delay on
Q2 movement until
Q1 has moved. As
the kinetics of the nascent
Q2 system become
faster at more positive potentials, this notch vanishes, replaced by a
plateau phase as the two charge systems merge more closely in time with each other. In other channels, sequential charge movement does not
result in biphasic
Igon
waveforms. Shaker
Igon
waveforms show merged biexponential decays at intermediate potentials
(3), and this is due to the unique kinetics and voltage-dependence of
the Shaker
Q1 and
Q2 systems. This
biexponential nature of Igon
decay has greatly facilitated the study of
Shaker
Q1 at more positive potentials, whereas the biphasic shape of Kv1.5
Igon waveforms has made separation by exponential fitting impossible at
these intermediate voltages.
Q1 and
Q2 recover at the same rate
on deactivation.
Recent experimental models of K+
channel gating assume that the channel deactivates along the same
pathway as that of activation (3, 19, 26, 33), with the exception of
transient sojourns in closed states that carry no charge and are not
part of the main deactivation pathway (26, 33). If the two charge
systems were to recover at different rates, a strong argument could be put forth for independent movement of the two systems on both activation and deactivation. The experiments in Fig. 5,
A-C, demonstrated equivalent
recovery rates of
Q1 and
Q2 at
80
mV, which suggests sequential coupling. However, other transitions that
carry little charge but are closely associated with channel opening
must also be reversed on deactivation. Recovery from inactivation may
also retard voltage sensor recovery on activation (8). Any of these processes can be rate limiting and may dictate recovery of both charge
systems. Early rate-limiting transitions are consistent with equal
Q1 and
Q2 recovery rates
for either a sequential or parallel system.
4-AP blocks some voltage-gated K+
channels by inhibiting transitions that occur later in the activation
pathway leading to channel opening and inactivation (4, 5, 10, 19).
Igon waveforms are not appreciably affected by 4-AP (7, 10), but 4-AP
accelerates the off-gating current (compare panels
A and D of Fig. 5) (10) and also the time
course of recovery of
Q1 and
Q2 (compare
panels C and
F of Fig. 5). Again, though, the recovery rates of
Q1 and
Q2 do not differ
significantly, arguing against independent charge system gating (Fig.
5F). Still, these data do not
exclude the possibility that the charge systems may simply recover at
the same rate and need not be sequentially coupled. The time course of
off-gating current waveforms on repolarization is known to be highly
voltage dependent in Shaker channels,
becoming progressively faster at more hyperpolarized potentials
(3). Q1 carries less
charge than Q2
(Fig. 3), and, as such, its recovery rate should be less dependent on
the repolarization potential. If the two systems recover sequentially,
Q2 recovery
before Q1 should
impart a steep voltage dependence to
Q1 recovery,
similar to that of
Q2 recovery. A
steep decline in the recovery rate between repolarization potentials of
80 and
40 mV was evident for both Q1 and
Q2 in Fig.
6C. As a control, the recovery rate of
Q1 in the absence
of Q2 movement
showed minor voltage dependence, because it represented intrinsic
Q1 recovery. This
provides strong evidence for sequential recovery of the two charge
systems. After Q1
and Q2 movement,
Q1 recovery must
follow Q2
recovery and, as such, adopts its stronger voltage dependence.
Q1 and
Q2 movement can be modeled
with a simple linear sequential scheme.
Many models of K+ channel gating
have been based on a strict sequential relationship between the various
gating transitions (1, 3, 26). Other models have used a branched
sequential scheme in which, at many points along the activation path,
the channel has more than one possible route it may take (19, 33). To
minimize the number of free parameters,
Q1 and
Q2 charge systems were modeled using a simple linear sequential scheme (Fig.
7A). We have not attempted to model
off-gating currents because their kinetics are known to be affected by
transitions that occur on or after channel opening. These transitions
do not affect the on-charge movement because they carry little charge,
but they strongly limit the time course of charge return (Fig.
2A,
inset, and Fig. 5).
Q1
Igon
waveforms measured in isolation negative to
20 mV showed a small
rising phase as indicated by the delayed rise of the
Q1 charge traces
(Fig. 3). At least two transitions were required to describe this
Q1 charge
movement, connecting three discrete Markov states
(C0-C2).
The first transition had a faster forward rate (data not shown) but
carried less charge than the subsequent transition (Fig.
7A), which accounted for the rising
phase of Igon.
At more depolarized voltages the rate of the second transition exceeded
that of the first transition and produced a more pronounced rising
phase (Fig. 7B,
middle). The third state in the
model, C2, is an intermediate
state connecting the
Q1 and
Q2 charge systems and was previously identified by fluorescence measurements of S4
movement (1). Q2
moves once the channel reaches C2
and there is sufficient energy provided by the voltage pulse to
surmount the energy barrier for the third transition. Isolated
Q2 was also modeled with two gating transitions. The second transition associated with Q2 movement
has slower kinetics than the first transition throughout the voltage
range over which
Q2 moves (data
not shown). However, the first transition only carries one-third of
total Q2 charge,
so a modest rising phase was reproduced.
Modeled Q2
charge, when moved in the presence of
Q1 (from a
negative holding potential), had very slow kinetics (Fig.
7B, right), in agreement with the slow
Q2 kinetics
observed in Shaker Igon
waveforms when fit with a double exponential function (3). However, it
is the association of
Q2 with
Q1 that produces
the marked rising phase of
Q2, because the
isolated kinetics of
Q1 and
Q2
Igon
waveforms are fast (Fig. 3, insets).
This suggests that intrinsic
Q2 kinetics
cannot be obtained from exponential fits of
Igon
decay if Q2
follows Q1
according to a sequential gating scheme. At
4 and +12 mV, at
which Q1 and
Q2 contribute similar amounts of charge to the overall
Igon,
the rapid rise of
Q2
Igon
after a
20-mV prepulse (Fig.
4B) is well reproduced in the model
(Fig. 7C). The kinetic disparity
between isolated Q2
Igon
and Q2
Igon
moving with Q1 is
evident, and it is clear that delayed
Q2 movement is
important in slowing
Igon
decay and makes a significant contribution to the rising phase of
Igon.
The knowledge that Kv1.5 activation gating is accomplished by
sequential movement of two charge systems will be useful in the further
analysis of drug actions on cardiac
K+ channels that involve resting
or closed-state block. Future studies of the biochemical basis of the
Q2 charge system
will need to take sequential coupling with
Q1 into account,
because independent Q2 transitions
are much faster than evident from kinetic analysis of overall
Igon waveforms.
 |
ACKNOWLEDGEMENTS |
This work was supported by grants from the Heart and Stroke
Foundations of British Columbia and Yukon and from the Medical Research
Council of Canada (to D. Fedida) and by a University Graduate
fellowship from the University of British Columbia (to J. C. Hesketh).
 |
FOOTNOTES |
The costs of publication of this
article were defrayed in part by the
payment of page charges. The article
must therefore be hereby marked
"advertisement"
in accordance with 18 U.S.C. §1734 solely to indicate this fact.
Address for reprint requests and other correspondence: D. Fedida, Dept.
of Physiology, Univ. of British Columbia, 2146 Health Sciences Mall,
Vancouver, BC, Canada V6T 1Z3 (E-mail:
fedida{at}interchange.ubc.ca).
Received 1 April 1999; accepted in final form 22 June 1999.
 |
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